IEEE - Institute of Electrical and Electronics Engineers, Inc. - Recent Progress in Resistance Change Memory

2008 66th Annual Device Research Conference (DRC)

Author(s): Y. Nishi ; J.R. Jameson
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Santa Barbara, CA, USA
Conference Date: 23 June 2008
Page(s): 271 - 274
ISBN (CD): 978-1-4244-1943-2
ISBN (Paper): 978-1-4244-1942-5
ISSN (Paper): 1548-3770
DOI: 10.1109/DRC.2008.4800835
Regular:

Resistance change memory (RRAM) is now attracting a lot of attention in parallel with phase change memory (PCM). Both memories are based on materials which exhibit nonvolatile changes in... View More

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