IEEE - Institute of Electrical and Electronics Engineers, Inc. - A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs

2008 66th Annual Device Research Conference (DRC)

Author(s): M. Higashiwaki ; Zhen Chen ; Yi Pei ; Rongming Chu ; S. Keller ; N. Hirose ; T. Mimura ; T. Matsui ; U.K. Mishra
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Santa Barbara, CA, USA
Conference Date: 23 June 2008
Page(s): 207 - 208
ISBN (CD): 978-1-4244-1943-2
ISBN (Paper): 978-1-4244-1942-5
ISSN (Paper): 1548-3770
DOI: 10.1109/DRC.2008.4800805
Regular:

This paper describes a comparative study on device characteristics of short-gate AlGaN/GaN HFETs with extremely thin SiN films deposited by different methods on the AlGaN surfaces. SiN deposition... View More

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