IEEE - Institute of Electrical and Electronics Engineers, Inc. - V-Gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-Band

2008 66th Annual Device Research Conference (DRC)

Author(s): Rongming Chu ; Likun Shen ; N. Fichtenbaum ; D. Brown ; Zhen Chen ; S. Keller ; U. Mishra
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Santa Barbara, CA, USA
Conference Date: 23 June 2008
Page(s): 205 - 206
ISBN (CD): 978-1-4244-1943-2
ISBN (Paper): 978-1-4244-1942-5
ISSN (Paper): 1548-3770
DOI: 10.1109/DRC.2008.4800804
Regular:

In this paper, we present our development of a novel HEMT which uses V-shaped gate geometry to reduce the field crowding at the gate edge, and pushes the high power performance of the deeply... View More

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