IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact of metal contact depth on device performance in back-gated semiconductor nanowire field effect transistors

2008 66th Annual Device Research Conference (DRC)

Author(s): E.-S. Liu ; N. Jain ; K. Varahramyan ; J. Nah ; S.K. Banerjee ; E. Tutuc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Santa Barbara, CA, USA
Conference Date: 23 June 2008
Page(s): 191 - 192
ISBN (CD): 978-1-4244-1943-2
ISBN (Paper): 978-1-4244-1942-5
ISSN (Paper): 1548-3770
DOI: 10.1109/DRC.2008.4800798
Regular:

Self assembled semiconductor (e.g. silicon, germanium) nanowires represent an attractive platform to fabricate field effect transistors devices that can reduce short channel effects in by... View More

Advertisement