IEEE - Institute of Electrical and Electronics Engineers, Inc. - Top-gated Thin Film FETs Fabricated from Arrays of Self-aligned Semiconducting Carbon Nanotubes

2008 66th Annual Device Research Conference (DRC)

Author(s): M. Engel ; J.P. Small ; M. Steiner ; Yu-Ming Lin ; A.A. Green ; M.C. Hersam ; P. Avouris
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Santa Barbara, CA, USA
Conference Date: 23 June 2008
Page(s): 149 - 150
ISBN (CD): 978-1-4244-1943-2
ISBN (Paper): 978-1-4244-1942-5
ISSN (Paper): 1548-3770
DOI: 10.1109/DRC.2008.4800778
Regular:

In this paper, we present a new approach for making active carbon nanotube (CNT) electrical devices and demonstrate the first aligned CNT array field effect transistors (FET) from 99% pure... View More

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