IEEE - Institute of Electrical and Electronics Engineers, Inc. - GaN-based HFET Design for Ultra-high frequency Operation

2008 66th Annual Device Research Conference (DRC)

Author(s): A. Koudymov ; M. Shur
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Santa Barbara, CA, USA
Conference Date: 23 June 2008
Page(s): 125 - 126
ISBN (CD): 978-1-4244-1943-2
ISBN (Paper): 978-1-4244-1942-5
ISSN (Paper): 1548-3770
DOI: 10.1109/DRC.2008.4800766
Regular:

In this paper, a new approach is proposed for optimizing the design of GaN-based HFETs for ultra high frequency operation. The key features of the ultra high frequency design include recessed gate... View More

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