IEEE - Institute of Electrical and Electronics Engineers, Inc. - The Mechanism of the Negative V fb Shift by Capping a Thin Layer of Me 2 O 3 (Me=Gd, Y or Dy)

2008 66th Annual Device Research Conference (DRC)

Author(s): Manhong Zhang ; Feng Zhu ; Hyoung-sub Kim ; Han Zhao ; Injo Ok ; J.C. Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Santa Barbara, CA, USA
Conference Date: 23 June 2008
Page(s): 85 - 86
ISBN (CD): 978-1-4244-1943-2
ISBN (Paper): 978-1-4244-1942-5
ISSN (Paper): 1548-3770
DOI: 10.1109/DRC.2008.4800746
Regular:

The large negative Vfb shift by capping a thin layer of Me2O3 (Me= Gd, Y or Dy) on SiO2 and HfO2 with TaN metal gate was investigated. It was... View More

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