IEEE - Institute of Electrical and Electronics Engineers, Inc. - Structural Sensitivity of Interband Tunnel Diodes for SRAM

2008 66th Annual Device Research Conference (DRC)

Author(s): S. Sutar ; Qin Zhang ; A. Seabaugh
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Santa Barbara, CA, USA
Conference Date: 23 June 2008
Page(s): 65 - 66
ISBN (CD): 978-1-4244-1943-2
ISBN (Paper): 978-1-4244-1942-5
ISSN (Paper): 1548-3770
DOI: 10.1109/DRC.2008.4800736
Regular:

Here, we present a study to outline the design space and trade-offs for high PVCR, low-voltage, low-current tunnel diodes with best results for peak currents and voltages being 4.3... View More

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