IEEE - Institute of Electrical and Electronics Engineers, Inc. - DC and RF Characterization of Sub-100-nm-Gate-Length Strained Ge-on-Insulator p-MOSFETs

2008 66th Annual Device Research Conference (DRC)

Author(s): S.W. Bedell ; A. Majumdar ; K.A. Jenkins ; J.A. Ott ; J. Arnold ; K. Fogel ; S.J. Koester ; D.K. Sadana
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Santa Barbara, CA, USA
Conference Date: 23 June 2008
Page(s): 45 - 46
ISBN (CD): 978-1-4244-1943-2
ISBN (Paper): 978-1-4244-1942-5
ISSN (Paper): 1548-3770
DOI: 10.1109/DRC.2008.4800729
Regular:

In this paper, the fabrication and characterization of strained Ge-on-insulator transistors with gate lengths down to 65 nm is described and also, for the first time, RF characteristics of... View More

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