IEEE - Institute of Electrical and Electronics Engineers, Inc. - A field-effect transistor with a negative differential resistance

Author(s): A. Kastalsky ; S. Luryi ; A.C. Gossard ; R. Hendel
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 1984
Volume: 5
Page(s): 57 - 60
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/EDL.1984.25831
Regular:

We report the effect of negative differential resistance (NDR) in the drain circuit of a new type of selectively doped AlGaAs/ GaAs heterojunction transistor. The key new element of our structure... View More

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