IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design, simulation and application of a novel compound MOSFET for emerging CMOS technology

2008 5th International Conference on Electrical & Computer Engineering. ICECE 2008

Author(s): S. Binzaid ; J.O. Attia
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2008
Conference Location: Dhaka, Bangladesh
Conference Date: 20 December 2008
Page(s): 936 - 940
ISBN (CD): 978-1-4244-2015-5
ISBN (Paper): 978-1-4244-2014-8
DOI: 10.1109/ICECE.2008.4769346
Regular:

An Active-Region-Cutout (ARC) technique was developed and applied to an enclosed poly MOS device to overcome shorted source-drain issue. This novel transistor is named as... View More

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