IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comparison of photoresponse characteristics between nitrogen and phosphorous doped n-C/p-Si heterostructure

2008 5th International Conference on Electrical & Computer Engineering. ICECE 2008

Author(s): A.T. Rasin ; S.M. Mominuzzaman
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2008
Conference Location: Dhaka, Bangladesh
Conference Date: 20 December 2008
Page(s): 842 - 845
ISBN (CD): 978-1-4244-2015-5
ISBN (Paper): 978-1-4244-2014-8
DOI: 10.1109/ICECE.2008.4769328
Regular:

Photoresponse of nitrogen and phosphorous doped n-C/p-Si heterostructure have been studied. Camphor (C10H16O) was used as starting precursor material in both cases.... View More

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