IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of uniaxial strain on the bandstructures of silicon nanowires

2008 5th International Conference on Electrical & Computer Engineering. ICECE 2008

Author(s): R.N. Sajjad ; K. Alam ; Q.D.M. Khosru
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2008
Conference Location: Dhaka, Bangladesh
Conference Date: 20 December 2008
Page(s): 283 - 286
ISBN (CD): 978-1-4244-2015-5
ISBN (Paper): 978-1-4244-2014-8
DOI: 10.1109/ICECE.2008.4769217
Regular:

The effects of uniaxial strain on the band structures of Lt100Gt silicon nanowires of width 2.75 - 3.84 nm are studied using sp3d5s* orbital basis atomistic tight... View More

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