IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characteristics of low-k RF MEMS capacitive switches on gallium arsenide substrate

2008 International Conference on Recent Advances in Microwave Theory and Applications (MICROWAVE-08)

Author(s): P. Sharma ; S.K. Koul ; R. Murlidharan ; A. Mangatayaru ; P. Suryanarayanan ; S. Chaturvedi ; A. Naik
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2008
Conference Location: Jaipur, India
Conference Date: 21 November 2008
Page(s): 271 - 274
ISBN (CD): 978-1-4244-2691-1
ISBN (Paper): 978-1-4244-2690-4
DOI: 10.1109/AMTA.2008.4763216
Regular:

This paper details the fabrication and performance of a low-k RF MEMS capacitive switch on gallium arsenide (epsivr =12.9) substrate. The switch is fabricated using GaAs MMIC compatible... View More

Advertisement