IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design consideration of high temperature SiC power modules

IECON 2008 - 34th Annual Conference of IEEE Industrial Electronics Society

Author(s): B. Grummel ; R. McClure ; Lei Zhou ; A.P. Gordon ; L. Chow ; Z.J. Shen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2008
Conference Location: Orlando, FL, USA
Conference Date: 10 November 2008
Page(s): 2,861 - 2,866
ISBN (CD): 978-1-4244-1766-7
ISBN (Paper): 978-1-4244-1767-4
ISSN (Paper): 1553-572X
DOI: 10.1109/IECON.2008.4758413
Regular:

SiC power semiconductors can safely operate at a junction temperature of 500degC. Such a high operating temperature range can substantially relax or completely eliminate the need for bulky and... View More

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