IEEE - Institute of Electrical and Electronics Engineers, Inc. - Optimizing technology of bulk electronic field for lateral high-voltage devices

2008 IEEE International Conference on Electron Devices and Solid-State Circuits

Author(s): Bo Zhang ; Jianbing Cheng ; Shengdong Hu ; Xiaorong Luo ; Ming Qiao ; Baoxing Duan ; Zhaoji Li
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2008
Conference Location: Hong Kong, China
Conference Date: 8 December 2008
Page(s): 1 - 6
ISBN (CD): 978-1-4244-2540-2
ISBN (Paper): 978-1-4244-2539-6
DOI: 10.1109/EDSSC.2008.4760735
Regular:

REBULF (reduced bulk field) and ENDIF (enhanced dielectric layer field) technologies are used in the design of lateral power devices to improve breakdown voltage. The two technologies have been... View More

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