IEEE - Institute of Electrical and Electronics Engineers, Inc. - Polysilicon nanowire chemical sensor based on CMOS standard process

2008 IEEE International Conference on Electron Devices and Solid-State Circuits

Author(s): C.-W. Huang ; S.-C. Hsu ; C.-T. Lin
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2008
Conference Location: Hong Kong, China
Conference Date: 8 December 2008
Page(s): 1 - 4
ISBN (CD): 978-1-4244-2540-2
ISBN (Paper): 978-1-4244-2539-6
DOI: 10.1109/EDSSC.2008.4760705
Regular:

Based on the improvements of the lithography technology, the dimension of the device has decreased to nanometer. On the other hand, silicon nanowire has been proposed to detect proteins, DNA, and... View More

Advertisement