IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

2008 IEEE International Conference on Electron Devices and Solid-State Circuits

Author(s): Shimeng Yu ; Yuning Zhao ; Gang Du ; Jinfeng Kang ; Ruqi Han ; Xiaoyan Liu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2008
Conference Location: Hong Kong, China
Conference Date: 8 December 2008
Page(s): 1 - 4
ISBN (CD): 978-1-4244-2540-2
ISBN (Paper): 978-1-4244-2539-6
DOI: 10.1109/EDSSC.2008.4760701
Regular:

3-D mixed-mode device-circuit simulation is presented to investigate stochastic mismatch of FinFETs SRAM cell induced by process variation including fin-thickness and gate length variation as well... View More

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