IEEE - Institute of Electrical and Electronics Engineers, Inc. - Scaling analysis of Phase Change Memory (PCM) driving devices

2008 IEEE International Conference on Electron Devices and Solid-State Circuits

Author(s): Lin Li ; Mansun Chan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2008
Conference Location: Hong Kong, China
Conference Date: 8 December 2008
Page(s): 1 - 4
ISBN (CD): 978-1-4244-2540-2
ISBN (Paper): 978-1-4244-2539-6
DOI: 10.1109/EDSSC.2008.4760699
Regular:

The scalability of PN diode and Field Effect Transistor (FETs) as a Phase Change Memory (PCM) driving device is investigated in this work. The study is carried using vertical Gate-All-Around (GAA)... View More

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