IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effective channel length increased due to switching from ≪110≫ to ≪100≫ orientation for PMOS transistors fabricated by 65 nm CMOS technology

2008 IEEE International Conference on Electron Devices and Solid-State Circuits

Author(s): W.S. Lau ; Peizhen Yang ; V. Ho ; B.K. Lim ; S.Y. Siah ; L. Chan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2008
Conference Location: Hong Kong, China
Conference Date: 8 December 2008
Page(s): 1 - 4
ISBN (CD): 978-1-4244-2540-2
ISBN (Paper): 978-1-4244-2539-6
DOI: 10.1109/EDSSC.2008.4760686
Regular:

The on-state current of PMOS transistors fabricated on (100) Si substrate can be easily increased by switching from <110> to <100> orientation because of faster hole transport. In... View More

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