IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of poisson’s equation

2008 IEEE International Conference on Electron Devices and Solid-State Circuits

Author(s): Vita Pi-Ho Hu ; Yu-Sheng Wu ; Pin Su
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2008
Conference Location: Hong Kong, China
Conference Date: 8 December 2008
Page(s): 1 - 4
ISBN (CD): 978-1-4244-2540-2
ISBN (Paper): 978-1-4244-2539-6
DOI: 10.1109/EDSSC.2008.4760684
Regular:

The electrostatic integrity for UTB GeOI MOSFET is examined comprehensively by using analytical solution of Poissonpsilas equation verified with TCAD simulation. Our results indicate that UTB GeOI... View More

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