IEEE - Institute of Electrical and Electronics Engineers, Inc. - Properties of enhanced hydrostatic pressure-annealed silicon oxynitride films

2008 IEEE International Conference on Electron Devices and Solid-State Circuits

Author(s): C.K. Wong ; C.W. Kok ; A. Misiuk ; A. Panas
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2008
Conference Location: Hong Kong, China
Conference Date: 8 December 2008
Page(s): 1 - 4
ISBN (CD): 978-1-4244-2540-2
ISBN (Paper): 978-1-4244-2539-6
DOI: 10.1109/EDSSC.2008.4760653
Regular:

The silicon oxynitride films were deposited by the plasma enhanced chemical vapor deposition (PECVD) technique at low temperature using ammonia, nitrous oxide and silane as precursor gases. The... View More

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