IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dopant content and thermal treatment of CdZnTe≪In≫: Effects on point-defect structures

2008 IEEE Nuclear Science Symposium and Medical Imaging conference (2008 NSS/MIC)

Author(s): P. Fochuk ; Ye. Nykonyuk ; Ye. Verzhak ; O. Kopach ; O. Panchuk ; A. Bolotnikov ; R. B. James
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2008
Conference Location: Dresden, Germany, Germany
Conference Date: 19 October 2008
Page(s): 72 - 77
ISBN (CD): 978-1-4244-2715-4
ISBN (Paper): 978-1-4244-2714-7
ISSN (Paper): 1095-7863
DOI: 10.1109/NSSMIC.2008.4775128
Regular:

We measured, in the 873-1173 K temperature range, the temperature- and Cd vapor-pressure-dependences of the free electron density in single Cd1-xZnxTe≪In≫ (0 ≤ × ≤... View More

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