IEEE - Institute of Electrical and Electronics Engineers, Inc. - Device Simulation of Monolithic Active Pixel Sensors: Radiation Damage Effects

2008 IEEE Nuclear Science Symposium and Medical Imaging conference (2008 NSS/MIC)

Author(s): Nicolas T. Fourches
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2008
Conference Location: Dresden, Germany, Germany
Conference Date: 19 October 2008
Page(s): 2,523 - 2,529
ISBN (CD): 978-1-4244-2715-4
ISBN (Paper): 978-1-4244-2714-7
ISSN (Paper): 1082-3654
DOI: 10.1109/NSSMIC.2008.4774868
Regular:

Vertexing for the future International Linear Collider represents a challenging goal because of the high spatial resolution required. CMOS Monolithic Active Pixel Sensors (MAPS) represent a good... View More

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