IEEE - Institute of Electrical and Electronics Engineers, Inc. - Development of Monolithic Active Pixel Sensor in SOI Technology fabricated on the wafer with thick device layer

2008 IEEE Nuclear Science Symposium and Medical Imaging conference (2008 NSS/MIC)

Author(s): W. Kucewicz ; B.M. Armstrong ; H.S. Gamble ; P. Grabiec ; K. Kucharski ; J. Marczewski ; W. Maziarz ; H. Niemiec ; F.H. Ruddell ; M. Sapor ; D. Tomaszewski
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2008
Conference Location: Dresden, Germany, Germany
Conference Date: 19 October 2008
Page(s): 1,123 - 1,125
ISBN (CD): 978-1-4244-2715-4
ISBN (Paper): 978-1-4244-2714-7
ISSN (Paper): 1082-3654
DOI: 10.1109/NSSMIC.2008.4774598
Regular:

Monolithic active pixel detectors fabricated in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout... View More

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