IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling of backgating effects on GaAs digital integrated circuits

Author(s): S.J. Lee ; C.P. Lee ; E. Shen ; G.R. Kaelin
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1984
Volume: 19
Page(s): 245 - 250
ISSN (Paper): 0018-9200
ISSN (Online): 1558-173X
DOI: 10.1109/JSSC.1984.1052124
Regular:

The characteristics of GaAs MESFETs are analyzed and modeled, and the results are used to simulate the performance of GaAs digital integrated circuits in the presence of backgating. The... View More

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