IEEE - Institute of Electrical and Electronics Engineers, Inc. - Process simulation of Trench Gate and Plate and Trench Drain SOI NLIGBT with TCAD tools

APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)

Author(s): H.P. Zhang ; L.L. Sun ; L.F. Jiang ; L.J. Ma ; M. Lin
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2008
Conference Location: Macao, China
Conference Date: 30 November 2008
Page(s): 1,037 - 1,040
ISBN (Paper): 978-1-4244-2341-5
ISBN (Online): 978-1-4244-2342-2
DOI: 10.1109/APCCAS.2008.4746201
Regular:

In this paper process simulation of a novel structural Silicon On Insulator (SOI) LIGBT cell with Trench Gate and Field Plate and Trench Drain (TGFPTD) was done in a sequence of advanced SOI CMOS... View More

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