IEEE - Institute of Electrical and Electronics Engineers, Inc. - Cumulative electrostatic discharge induced degradation of power-rail ESD clamp device in high-voltage CMOS/DMOS technologies

APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)

Author(s): Chung-Ti Hsu ; Shu-Chuan Chen ; Yen-Hsien Chen ; Yu-Ti Su ; Ming-Fang Lai ; Che-Hung Chen ; Po-An Chen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2008
Conference Location: Macao, China
Conference Date: 30 November 2008
Page(s): 49 - 52
ISBN (Paper): 978-1-4244-2341-5
ISBN (Online): 978-1-4244-2342-2
DOI: 10.1109/APCCAS.2008.4745957
Regular:

In this paper, a cumulative electrostatic discharge (ESD) induced degradation of power-rail ESD clamp circuits in high-voltage (HV) CMOS/DMOS technologies was proposed. The IC which was verified... View More

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