IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication, measurement and tuning of a photonic crystal H1-cavity in deeply etched InP/InGaAsP/InP

2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM)

Author(s): H.H.J.E. Kicken ; I. Barbu ; J. Gabriels ; R.W. van der Heijden ; R. Notzel ; F. Karouta ; H.W.M. Salemink ; E. van der Drift ; H.W.M. Salemink
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2008
Conference Location: Versailles, France
Conference Date: 25 May 2008
Page(s): 1 - 4
ISBN (CD): 978-1-4244-2259-3
ISBN (Paper): 978-1-4244-2258-6
ISSN (Paper): 1092-8669
DOI: 10.1109/ICIPRM.2008.4703023
Regular:

A point defect cavity (H1) was fabricated by deep etching in the InP/InGaAsP/InP system. The optical properties of the devices were experimentally investigated by transmission spectroscopy... View More

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