IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication, measurement and tuning of a photonic crystal H1-cavity in deeply etched InP/InGaAsP/InP
2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM)
Author(s): | H.H.J.E. Kicken ; I. Barbu ; J. Gabriels ; R.W. van der Heijden ; R. Notzel ; F. Karouta ; H.W.M. Salemink ; E. van der Drift ; H.W.M. Salemink |
Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
Publication Date: | 1 May 2008 |
Conference Location: | Versailles, France |
Conference Date: | 25 May 2008 |
Page(s): | 1 - 4 |
ISBN (CD): | 978-1-4244-2259-3 |
ISBN (Paper): | 978-1-4244-2258-6 |
ISSN (Paper): | 1092-8669 |
DOI: | 10.1109/ICIPRM.2008.4703023 |
Regular:
A point defect cavity (H1) was fabricated by deep etching in the InP/InGaAsP/InP system. The optical properties of the devices were experimentally investigated by transmission spectroscopy... View More