IEEE - Institute of Electrical and Electronics Engineers, Inc. - High quality In x Ga 1−x As (x: 0.1– 0.13) platy crystal growth for substrates of 1.3μm laser diodes

2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM)

Author(s): K. Kinoshita ; T. Ueda ; S. Yoda ; M. Arai ; Y. Kawaguchi ; Y. Kondo ; H. Aoki ; T. Hosokawa ; S. Yamamoto
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2008
Conference Location: Versailles, France
Conference Date: 25 May 2008
Page(s): 1 - 4
ISBN (CD): 978-1-4244-2259-3
ISBN (Paper): 978-1-4244-2258-6
ISSN (Paper): 1092-8669
DOI: 10.1109/ICIPRM.2008.4702984
Regular:

We have prepared homogeneous ternary InxGa1-xAs (x: 0.1 - 0.13) platy single crystals for 1.3 mum laser diode substrates by a novel bulk crystal growth technique named the... View More

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