IEEE - Institute of Electrical and Electronics Engineers, Inc. - Multiple lasing lines from deep-etched photonic crystal of asymmetric muliple quantum wells

2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM)

Author(s): J.C. Bai ; C.L. Chiu ; J.Y. Hsin ; C.Y. Chen ; T.S. Lay
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2008
Conference Location: Versailles, France
Conference Date: 25 May 2008
Page(s): 1 - 3
ISBN (CD): 978-1-4244-2259-3
ISBN (Paper): 978-1-4244-2258-6
ISSN (Paper): 1092-8669
DOI: 10.1109/ICIPRM.2008.4702907
Regular:

A slab photonic crystal (PhC) laser was fabricated on InP substrate. The wafer consists of p-i-n laser epitaxial structure with asymmetric InGaAs/InGaAlAs multiple quantum wells. The deep-etched... View More

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