IEEE - Institute of Electrical and Electronics Engineers, Inc. - Common-base intermodulation characteristics of advanced SiGe HBTs

2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM

Author(s): C.M. Grens ; S. Seth ; J.D. Cressler
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2008
Conference Location: Monteray, CA, USA
Conference Date: 13 October 2008
Page(s): 244 - 247
ISBN (CD): 978-1-4244-2726-0
ISBN (Paper): 978-1-4244-2725-3
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.2008.4662753
Regular:

Common-base (CB) linearity performance of insensitive to these various parameters. However, at high currents, these factors each play a significant role in determining overall CB linearity. We... View More

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