IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization and modeling of emitter-base leakage in high speed SiGe NPNs

2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM

Author(s): M. Dahlstrom ; R.A. Camillo-Castillo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2008
Conference Location: Monteray, CA, USA
Conference Date: 13 October 2008
Page(s): 137 - 140
ISBN (CD): 978-1-4244-2726-0
ISBN (Paper): 978-1-4244-2725-3
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.2008.4662731
Regular:

Leakage through the base is a common yield detractor in SiGe NPNs. The defects are commonly referred to as dasiapipespsila and are manifested as a current path between emitter and collector... View More

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