IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling mixed-mode DC and RF stress in SiGe HBT power amplifiers

2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM

Author(s): Peng Cheng ; C.M. Grens ; A. Appaswamy ; P.S. Chakraborty ; J.D. Cressler
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2008
Conference Location: Monteray, CA, USA
Conference Date: 13 October 2008
Page(s): 133 - 136
ISBN (CD): 978-1-4244-2726-0
ISBN (Paper): 978-1-4244-2725-3
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.2008.4662730
Regular:

The degradation of SiGe HBTs due to mixed-mode DC and RF stress (simultaneous application of high current and voltage) has been modeled for the first time. State-of-the-art 200 GHz SiGe HBTs were... View More

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