IEEE - Institute of Electrical and Electronics Engineers, Inc. - Gate controlled vertical-lateral NPN bipolar transistor in 90nm RF CMOS process

2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM

Author(s): Zhiming Feng ; Shuo-Mao Chen ; C. Xie ; Yan Cui ; M. Brunsman ; C.P. Chao ; H.C. Tseng ; Guofu Niu ; G.A. Rezvani
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2008
Conference Location: Monteray, CA, USA
Conference Date: 13 October 2008
Page(s): 29 - 32
ISBN (CD): 978-1-4244-2726-0
ISBN (Paper): 978-1-4244-2725-3
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.2008.4662706
Regular:

A new gate controlled bipolar transistor is introduced in this paper which combines the lateral and vertical bipolar effect in standard NMOS device in a 90 nm triple well process technology. A... View More

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