IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of GaAs FET's in Terms of Noise, Gain, and Scattering Parameters through a Noise Parameter Test Set

Author(s): E.F. Calandra ; G. Martines ; M. Sannino
Sponsor(s): IEEE Microwave Theory and Techniques Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 1984
Volume: 32
Page(s): 231 - 236
ISSN (Paper): 0018-9480
ISSN (Online): 1557-9670
DOI: 10.1109/TMTT.1984.1132658
Regular:

A method for the complete characterization of GaAs FET's in terms of noise parameters (F/sub o/,Gamma/sub on/, R/sub n/), gain parameters (G/sub ao/, Gamma /sub og/, R/sub g/), and of those... View More

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