IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells

2008 International Conference on Nanoscience and Nanotechnology (ICONN)

Author(s): Sichao Du ; L. Fu ; H.H. Tan ; C. Jagadish
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 2008
Conference Location: Melbourne, Vic., Australia
Conference Date: 25 February 2008
Page(s): 32 - 35
ISBN (CD): 978-1-4244-1504-5
ISBN (Paper): 978-1-4244-1503-8
DOI: 10.1109/ICONN.2008.4639238
Regular:

In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on... View More

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