IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low power 8T SRAM using 32nm independent gate FinFET technology

2008 IEEE International SOC Conference (SOCC)

Author(s): Young Bok Kim ; Yong-Bin Kim ; F. Lombardi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2008
Conference Location: Newport Beach, CA, USA
Conference Date: 17 September 2008
Page(s): 247 - 250
ISBN (CD): 978-1-4244-2597-6
ISBN (Paper): 978-1-4244-2596-9
DOI: 10.1109/SOCC.2008.4641521
Regular:

In this paper, new SRAM cell design methods for FinFET technology are proposed. One of the most important features of FinFET is that the independent front and back gate can be biased differently... View More

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