IEEE - Institute of Electrical and Electronics Engineers, Inc. - Highly efficient operation modes in GaN power transistors delivering upwards of 81% efficiency and 12W output power

2008 IEEE MTT-S International Microwave Symposium Digest - MTT 2008

Author(s): Peter Wright ; Aamir Sheikh ; Chris Roff ; P. J. Tasker ; J. Benedikt
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Atlanta, GA, USA, USA
Conference Date: 15 June 2008
Page(s): 1,147 - 1,150
ISBN (CD): 978-1-4244-1781-0
ISBN (Paper): 978-1-4244-1780-3
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2008.4633260
Regular:

This paper investigates the development of an inverse class-F design procedure for obtaining very high efficiency performance at high power levels. RF waveform engineering was used to obtain high... View More

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