IEEE - Institute of Electrical and Electronics Engineers, Inc. - A ruggedly packaged D-Band GaAs Gunn diode with hot electron injection suitable for volume manufacture

2008 IEEE MTT-S International Microwave Symposium Digest - MTT 2008

Author(s): N. Farrington ; P. Norton ; M. Carr ; J. Sly ; M. Missous
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Atlanta, GA, USA, USA
Conference Date: 15 June 2008
Page(s): 281 - 284
ISBN (CD): 978-1-4244-1781-0
ISBN (Paper): 978-1-4244-1780-3
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2008.4633158
Regular:

GaAs Gunn diodes optimized for use in second harmonic mode at 125GHz have been fabricated with hot electron injection based on a novel step-graded AlxGa(1−x)As launcher. Testing was... View More

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