IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improvement and Design 1R PoRAM with Read/Write/Erase Operation

International Conference on Computational Sciences and its Applications

Author(s): Jung Ha Kim ; Sa Yong Shim ; Sang Sun Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Perugia, Italy
Conference Date: 30 June 2008
Page(s): 117 - 121
ISBN (Paper): 978-0-7695-3243-1
DOI: 10.1109/ICCSA.2008.8
Regular:

Polymer random access memory is a next-generation nonvolatile memory device possessing two stable states of which their respective resistances differ by more than a factor of 100. This memory... View More

Advertisement