IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling thermal effects on MOS I-V characteristics

Author(s): D.K. Sharma ; K.V. Ramanathan
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 1983
Volume: 4
Page(s): 362 - 364
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/EDL.1983.25764
Regular:

The temperature distribution in a MOS transistor caused by power dissipation within the device has been calculated by solving the heat diffusion equation. Using this temperature distribution, IV... View More

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