IEEE - Institute of Electrical and Electronics Engineers, Inc. - Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO 2

2008 Conference on Lasers and Electro-Optics (CLEO)

Author(s): Boyang liu ; Seng-Tiong Ho
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2008
Conference Location: San Jose, CA, USA
Conference Date: 4 May 2008
Page(s): 1 - 2
ISBN (Paper): 978-1-55752-859-9
DOI: 10.1109/CLEO.2008.4552164
Regular:

A new approach for direct sub-10 nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect... View More

Advertisement