IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low noise silicon CMOS single-electron transistors and electron pumps

2008 Conference on Precision Electromagnetic Measurements

Author(s): M. Pierre ; X. Jehl ; M. Sanquer ; M. Vinet ; B. Previtali ; G. Molas ; S. Deleonibus
Sponsor(s): Bur. Int. Poids Meas. (BIPM)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Broomfield, CO, USA
Conference Date: 8 June 2008
Page(s): 282 - 283
ISBN (CD): 978-1-4244-2400-9
ISBN (Paper): 978-1-4244-2399-6
DOI: 10.1109/CPEM.2008.4574763
Regular:

We design and fabricate single-electron transistors and electron pumps within an industrial CMOS platform. Based on silicon nanowire transistors, these devices allow very simple and stable... View More

Advertisement