IEEE - Institute of Electrical and Electronics Engineers, Inc. - Atomic layer deposited alumina (Al 2 O 3 ) coating on thin film cryoresistors

2008 Conference on Precision Electromagnetic Measurements

Author(s): O. Hahtela ; A. Satrapinski ; P. Sievila ; N. Chekurov
Sponsor(s): Bur. Int. Poids Meas. (BIPM)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Broomfield, CO, USA
Conference Date: 8 June 2008
Page(s): 272 - 273
ISBN (CD): 978-1-4244-2400-9
ISBN (Paper): 978-1-4244-2399-6
DOI: 10.1109/CPEM.2008.4574758
Regular:

Metal alloy (NiCrCuAlGe) thin film resistors were coated with atomic layer deposited (ALD) alumina (Al2O3) in order to improve the stability and repeatability of the high... View More

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