IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study on the interfacial properties at the OTS treated SiO 2 film

2008 International Conference on Condition Monitoring and Diagnosis, CMD 2008

Author(s): T. Oh ; Jong Wook Kim
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Beijing, China
Conference Date: 21 April 2008
Page(s): 276 - 279
ISBN (CD): 978-1-4244-1622-6
ISBN (Paper): 978-1-4244-1621-9
DOI: 10.1109/CMD.2008.4580280
Regular:

n-octadecyltrichlorosilane treated the SiO2 film was prepared by the mixed solution of chloroform and hexane. The leakage current decreased by the treatment of organic diluted... View More

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