IEEE - Institute of Electrical and Electronics Engineers, Inc. - Threshold voltage shift instability induced by plasma charging damage in MOSFETs with high-k dielectric

2008 IEEE International Conference on IC Design and Technology & Tutorial (ICICDT)

Author(s): K. Eriguchi ; M. Kamei ; K. Okada ; H. Ohta ; K. Ono
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Austin, TX, USA
Conference Date: 2 June 2008
Page(s): 97 - 100
ISBN (CD): 978-1-4244-1811-4
ISBN (Paper): 978-1-4244-1810-7
DOI: 10.1109/ICICDT.2008.4567255
Regular:

Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas... View More

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