IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reliability issues for nano-scale CMOS dielectrics: - From transistors to product reliability - - From SiON to high-k dielectrics -

2008 IEEE International Conference on IC Design and Technology & Tutorial (ICICDT)

Author(s): G. Ribes ; M. Rafik ; D. Roy ; J.M. Roux
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Austin, TX, USA
Conference Date: 2 June 2008
Page(s): 91 - 96
ISBN (CD): 978-1-4244-1811-4
ISBN (Paper): 978-1-4244-1810-7
DOI: 10.1109/ICICDT.2008.4567254
Regular:

Continuous scaling, necessary for enhanced performance and cost reduction, has pushed existing CMOS materials much closer to their intrinsic reliability limits, forcing reliability engineers to... View More

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