IEEE - Institute of Electrical and Electronics Engineers, Inc. - A study of L BO effects in a 40 nm SA-MSCFET

2008 IEEE International Conference on IC Design and Technology & Tutorial (ICICDT)

Author(s): Jyi-Tsong Lin ; Yi-Chuen Eng ; Shiang-Shi Kang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Austin, TX, USA
Conference Date: 2 June 2008
Page(s): 67 - 70
ISBN (CD): 978-1-4244-1811-4
ISBN (Paper): 978-1-4244-1810-7
DOI: 10.1109/ICICDT.2008.4567248
Regular:

This work aims to examine and analyze carefully the effects of block oxide length (LBO) in a 40 nm multi-substrate-contact field-effect transistor (MSCFET). In addition, the... View More

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