IEEE - Institute of Electrical and Electronics Engineers, Inc. - Which is the best dual-port SRAM in 45-nm process technology? — 8T, 10T single end, and 10T differential —

2008 IEEE International Conference on IC Design and Technology & Tutorial (ICICDT)

Author(s): H. Noguchi ; S. Okumura ; Y. Iguchi ; H. Fujiwara ; Y. Morita ; K. Nii ; H. Kawaguchi ; M. Yoshimoto
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Austin, TX, USA
Conference Date: 2 June 2008
Page(s): 55 - 58
ISBN (CD): 978-1-4244-1811-4
ISBN (Paper): 978-1-4244-1810-7
DOI: 10.1109/ICICDT.2008.4567245
Regular:

This paper compares readout powers and operating frequencies among dual-port SRAMs: an 8T SRAM, 10T single-end SRAM, and 10T differential SRAM. The conventional 8T SRAM has the least transistor... View More

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